| PART |
Description |
Maker |
| CHR CHR2520FC-10MEG-1 |
10 Meg to 100 Meg, 1 Tolerance, Temperature Coefficient to as low as 25 ppm/C
|
Rhopoint Components Ltd.
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| MT48H16M16LF MT48H8M32LF MT48H16M16LFB5-8ITG MT48H |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology, Inc.
http://
|
| AS4LC4M16DG-6S_XT AS4LC4M16 AS4LC4M16DG-5S_IT AS4L |
4 MEG x 16 DRAM
|
AUSTIN[Austin Semiconductor]
|
| AS4LC4M16DG-5S/IT AS4LC4M16DG-5S/XT AS4LC4M16DG-6S |
4 MEG x 16 DRAM
|
Austin Semiconductor
|
| MT4LC4M4E8DJ |
4 MEG x 4 EDO DRAM
|
Micron Technology
|
| 27C210 |
1 MEG CMOS EPROM (64K x 16)
|
Philips
|
| 97SD3248 97SD324806 |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks
|
Maxwell Technologies
|
