| PART |
Description |
Maker |
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| PV18-6R-CY PV18-6R-MY PV18-4R-CY PV18-4R-MY PV18-8 |
22-18 BARREL FUNNELED VINYL INSULATED RING TONGUE, .150(3.81) MAX WIRE INSULATION DIAMETER
TERM RING VNYL INS ROHS RoHS Compliant: Yes RING TERMINAL
TERM RING VINYL INS RoHS Compliant: Yes RING TERMINAL
TERM RING VINYL INS RING TERMINAL
Ring Tongue Solderless Terminal; Wire Size (AWG):22-18; Stud Size:#8; Insulator Color:Red; Mounting Hole Dia:.17"; Overall Length:0.91"; Overall Width:0.31"; Pack Quantity:1000; Stud/Tab Size:#8 RING TERMINAL
|
PANDUIT CORP.
Panduit, Corp.
|
| FS16SM-5 |
Power MOSFETs: FS Series, Medium Voltage, 250V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| CM50MD-12H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIP31 TIP31C TIP31A TIP31B |
Medium Power Linear Switching Applications
|
SemiHow Co.,Ltd.
|
| TIP168A |
MEDIUM POWER LINEAR SWITCHING APPLICATIONS
|
FCI[First Components International]
|
| QM50HY-2H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM30E2Y QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM20DX-H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
