| PART |
Description |
Maker |
| BSM10GD60DN2 C67076-A2508-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| MC7815 MC7806 MC7809 MC7809CT MC7808CT MC7808ACT M |
3-terminal 1A positive volitage regulator
15 A 3.3-V Input Bus Termination Power Module for DDR/QDR Memory 10-DIP MODULE -40 to 85
16-A, 4.5-V to 14-V Input, Ceramic Cap Version, Non-Iso, Wide Output Adj, Pwr Module w/TurboTrans 11-DIP MODULE -40 to 85 9 V FIXED POSITIVE REGULATOR, PSFM3
3-Terminal 1A Positive Voltage Regulator 三端一正电压调节器
5.0 AMP POSITIVE VOLTAGE REGULATOR 12 V FIXED POSITIVE REGULATOR, PSFM3
three-terminal positive voltage regulators 5 V FIXED POSITIVE REGULATOR, PSFM3
5.0 AMP POSITIVE VOLTAGE REGULATOR 5.0放大器正电压稳压
16-A, 2.2-V to 5.5-V Input, Non-Isolated, Wide-Output, Adjustable Power Module with TurboTrans 11-DIP MODULE -40 to 85
2.25 A, 4.5-V to 18-V Input Wide Adjust Miniature Power Module 5-DIP MODULE -40 to 85
6-A, 2.2-V to 5.5-V Input, Ceramic Cap Version, Non-Iso, Wide-Output, Adj Power Module w/TurboTrans 10-DIP MODULE -40 to 85
30-A, 4.5V to 5.5V Input, Non-Isolated, Wide Output Adjustable Power Module with TurboTrans 14-DIP MODULE -40 to 85
30-A, 5.5-V to 14-V Input, Non-Isolated, Wide Output Adjust, Power Module w/ TurboTrans 14-DIP MODULE -40 to 85
16-A, 4.5-V to 14-V Input, Non-Isolated, Wide Output Adjust, Power Module w/ TurboTrans 11-DIP MODULE -40 to 85
30 A, 5-V Input Wide-Output Adjust Plug-in Power Module 13-DIP MODULE -40 to 85
60 A, 3.3/5-V Input Non-Isolated Wide-Output Adjust Power Module 20-DIP MODULE -40 to 85
3-Terminal 1A Positive Voltage Regulator
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| BSM111AR C67076-S1013-A2 BSM111 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| APTGF150A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| 1792D-16BT0LP 1792D-4B0LP 1792D-2B2LP 1792D-4BT4LP |
MODULE 16 OUT
MODULE 4 IN 模块4中的
MODULE 4 IN/4 OUT 模块4输入/ 4输出
MODULE 16 IN 模块16
MODULE 2 IN/2 OUT 模块2输入/ 2输出
|
NXP Semiconductors N.V.
Stackpole Electronics, Inc.
|
| 1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
