| PART |
Description |
Maker |
| PLL103-02 PLL103-02XC PLL103-02XI PLL103-02XM |
DDR SDRAM Buffer for Desktop PCs with 4 DDR DIMMS
|
ETC
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HYMD116M725BL8-H HYMD116M725BL8-J HYMD116M725BL8-K |
Unbuffered DDR SDRAM SO-DIMM
16Mx72|2.5V|J/M/K/H/L|x9|DDR SDRAM - SO DIMM 128MB 16Mx72 | 2.5V的|焦九龙/升| X9热卖| DDR SDRAM内存- 128MB的内存苏
|
Hynix Semiconductor
http://
Atmel, Corp.
|
| M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
256MB DDR SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns.
DDR SDRAM Specification Version 0.61
128Mb DDR SDRAM
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
