| PART |
Description |
Maker |
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| MA2B345 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| FMMV109 |
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors]
|
| FMMV2109 FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2 |
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES
|
ETC
ZETEX[Zetex Semiconductors]
|
| 1SV285-14 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| 1SV101 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM TUNER APPLICATIONS
|
TOSHIBA
|
| T499 T499_1 |
High Temperature ( 175) Tantalum SMT Capaci
|
KEMET[Kemet Corporation]
|
| KDV262E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
| KDV1471 |
FM Tuning
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
