| PART |
Description |
Maker |
| RF2377-410 RF2377-411 RF237706 RF2377 |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER
|
http://
RFMD[RF Micro Devices]
|
| UPC8120T-E3 UPC8131TA UPC8119T-E3 |
-15 dBm INPUT/ VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
Microwave/Millimeter Wave Amplifier
|
NEC Corp.
|
| MAX2267 MAX2267EUE MAX2268EUE MAX2269EUE MAX2268 M |
2.7V / Single-Supply / Cellular-Band Linear Power Amplifiers
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 887 MHz - 925 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 2.7V、单电源、蜂窝频段线性功率放大器
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| RF2377 RF2377-410PCBA RF2377-411PCBA |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER
DIODE SCHOTTKY DUAL-DUAL COMMON-CATHODE 30V 200mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-363 3K/REEL 个人通讯/蜂窝时分多址/码分多址/的W - CDMA线性可变增益放大器
|
RF MICRO DEVICES INC
http://
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| IVA-05208-TR1 IVA-05208 IVA-05208-STR |
0 MHz - 1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| AD600AR-REEL AD600SQ/883B AD600AR-REEL7 |
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: SOIC - Wide; No of Pins: 16; Temperature Range: Industrial SPECIALTY ANALOG CIRCUIT, PDSO16
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: CerDIP; No of Pins: 16; Temperature Range: Military SPECIALTY ANALOG CIRCUIT, CDIP16
|
Analog Devices, Inc.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
