PART |
Description |
Maker |
AFT21H350W03SR6 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
LET9085 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY RF POWER TRANSISTORS Ldmos Enhanced Technology
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
AN1224 |
LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION
|
SGS Thomson Microelectronics
|
RF--35 CRCW120610KOJNEA CRCW120610ROJNEA ATC100B0R |
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
LET9060S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
AN1223 |
RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY
|
SGS Thomson Microelectronics
|
UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
1011LD300 |
RF Power Transistors: AVIONICS 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|