| PART |
Description |
Maker |
| QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| AMS3400SRG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| WPM2026 WPM2026-3 WPM2026-3TR |
Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS14500 |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| MAX1703ESE |
1-Cell to 3-Cell / High-Power 1.5A / Low-Noise / Step-Up DC-DC Converter
|
Maxim
|
| ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
