PART |
Description |
Maker |
IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor From old datasheet system N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate IGBT 0.5 A @ 25 600 V From old datasheet system
|
ONSEMI[ON Semiconductor]
|
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Powerex, Inc.
|
2PG303 |
Insulated Gate Bipolar Transistor
|
Panasonic
|
IRG4PF50W |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|