| PART |
Description |
Maker |
| FDMF8704 |
High Current / High Frequency FET plus Driver Multi-chip Module
|
Fairchild Semiconductor
|
| FDMF8704V |
High Efficiency / High Frequency FET plus Driver Multi-chip Module with Internal Voltage Regulator
|
Fairchild Semiconductor
|
| HIP4081 HIP4081IP |
2.6 A FULL BRDG BASED MOSFET DRIVER, PDIP20
Driver, Full Bridge FET, High Frequency, 80V/2.5A Peak, Independent 4 N-Channel FET Driver
|
INTERSIL CORP
|
| 520242-2 |
PCB Mounted Jacks - Single Port, Multi-port and Stacked; FL MOD JACK PC MT ASSY (6 POS) ( AMP )
|
Tyco Electronics
|
| IRS2132JPBF IRS21303JPBF IRS2132JTRPBF |
3 Phase Driver, Inverting Input, 0.8us Deadtime in a mod. 44-lead PLCC package
3 Phase Driver, Inverting Input, 0.8us Deadtime 13-20 Vout in a mod. 44-lead PLCC package
|
International Rectifier
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| IRS2133JPBF IRS2133JTRPBF |
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a mod. 44-lead PLCC package
|
International Rectifier
|
| M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36L0R7050L1ZAMF M36L0R7060U1 M36L0R7060U1ZAME M36 |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
|
STMicroelectronics
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
|
