PART |
Description |
Maker |
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CMHD4150 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE 0.25 A, 50 V, SILICON, SIGNAL DIODE SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|
2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) From old datasheet system HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
CPD83V10 |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
HSU226 |
Diodes>Switching Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
BAR74 Q62702-F704 |
From old datasheet system Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
BAS16-02W BAS1602W Q62702-A1239 |
From old datasheet system Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BAV99W Q62702-A1051 |
From old datasheet system Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group Infineon
|
CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|