| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| KTC4793 |
General Purpose Transistor
TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| 2SA1225 2SA1225Y |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| 2SC3076 E000787 |
TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS) 晶体管（功率放大器，SWITCING应用
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SA1225 E000485 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3266 E000811 2SC3266GR 2SC3266BL |
SMALL SIGNAL TRANSISTOR, TO-92
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SA1315 E000508 |
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| KTB1772 |
General Purpose Transistor
EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
