| PART |
Description |
Maker |
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| 2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
| MJE2955 MJE2955T MJE3055T |
NPN Transistor
POWER TRANSISTORS(10A /60V /75W)
POWER TRANSISTORS(10A,60V,75W) 功率晶体管（10A条，60V5W的）
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| 2SC58801 |
Power transistor (60V, 2A)
|
Rohm
|
| 2SC5826 |
Power transistor (60V, 3A)
|
Rohm
|
| 2SC5881 |
Power transistor (60V, 5A)
|
Rohm
|
| 2SC58242 |
Power transistor (60V, 3A)
|
Rohm
|
| 2SB1243 2SB1184 2SB1185 |
Power Transistor (-60V, -3A)
|
ROHM[Rohm]
|
