| PART |
Description |
Maker |
| LBAT54AWT1G LBAT54AWT3G |
Dual Series Schottky Barrier Diodes
|
Leshan Radio Company
|
| BAT54SL |
Dual Series Schottky Barrier Diode
|
ON Semiconductor
|
| BAT54SLT1G BAT54SLT1 |
Dual Series Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
| NSR30CM3T5D NSR30CM3T5G |
Dual Series Schottky Barrier Diodes
|
ON Semiconductor
|
| BAT54SLT1-D |
Dual Series Schottky Barrier Diodes
|
ON Semiconductor
|
| BAT54RSLT1 |
Dual Series Schottky Barrier Diodes
|
乐山无线电股份有限公
LRC[Leshan Radio Company]
|
| BAT54SWT1 |
Dual Series Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| BAS40-04LT1 |
Dual Series Schottky Barrier Diode
|
LRC[Leshan Radio Company]
|
| LBAT54C LBAT54CLT1 |
Dual Series Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| LBAT54CLT3G LBAT54CLT1G |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed
|
Leshan Radio Company
|
| BAS70-04LT1G BAS70-04LT1 BAS70-04L |
Dual Series Schottky Barrier Diode(70V双肖特基势垒二极 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| CD0603-B0130L CD0603-B0130R CD0603-B0230L CD0603-B |
Schottky Barrier Chip Diode Series 0.1 A, 45 V, SILICON, SIGNAL DIODE
Schottky Barrier Chip Diode Series 肖特基二极管系列芯片
Schottky Barrier Chip Diode Series 0.1 A, 35 V, SILICON, SIGNAL DIODE
|
Bourns Inc.
Bourns, Inc.
|
