| PART |
Description |
Maker |
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI740G IRFI740 IRFI740GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A)
|
IRF[International Rectifier]
|
| IRFI9634G |
-250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V Rds(on)=1.0ohm Id=-4.1A)
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)
|
IRF[International Rectifier]
|
| IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A)
Hexfet? Power MOSFET
|
IRF[International Rectifier]
|
| IRFI744G IRFI744GPBF |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=450V Rds(on)=0.63ohm Id=4.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A) 功率MOSFET（减振钢板基本\u003d 450V，的Rds（on）\u003d 0.63ohm，身份证\u003d 4.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9540NSPBF IRF9540NLPBF IRF9540NSTRLPBF IRF9540N |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A )
Advanced Process Technology
|
International Rectifier
|
| IRF1104PBF IRF1104PBF-15 |
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009Ω , ID = 100A )
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
| IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRFPE50 IRFPE50PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A)
|
International Rectifier
|
