PART |
Description |
Maker |
APT60GU30B APT60GU30S |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT50GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT11GP60BDQB |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT45GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60B2DF2 |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT15GP60BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
APT83GU30B APT83GU30S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technology
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|