| PART |
Description |
Maker |
| GS8644V18B-166I GS8644V36E-225 GS8644V18E-150I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量，通过同步唑的SRAM
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8641Z18 GS8641Z32 GS8641Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| CY7C1219F-133AC CY7C1219F |
1-Mb (32K x 36) Pipelined DCD Sync SRAM
1-Mbit (32K x 36) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| GS8640ZV36T-300I GS8640ZV36T-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8644Z18E-133IV GS8644Z18E-150IV GS8644Z18E-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
