PART |
Description |
Maker |
HYS64V16302GU-75-D HYS64V16302GU-75-C2 HYS64V16302 |
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3,6004位,128MByte SDRAM内存模块168针脚无缓冲DIMM模块 3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3,60064位,128MByte SDRAM内存模块168针脚无缓DIMM模块
|
Infineon Technologies AG
|
HDD16M72D9W HDD16M72D9W-13A HDD16M72D9W-10A |
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with Unbuffered ECC DDR SDRAM内存模块128Mbyte6Mx72bit),基于6Mx8Banks 4K的参考。,184Pin,与无缓冲ECC内存
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
HYMD116725A8 HYMD116725A8-L |
16Mx72|2.5V|K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB 16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
WEDPND16M72S-200BI WEDPND16M72S-200BM WEDPND16M72S |
200MHz; 2.5V power supply; 16M x 72 DDR SDRAM 250MHz; 2.5V power supply; 16M x 72 DDR SDRAM 266MHz; 2.5V power supply; 16M x 72 DDR SDRAM
|
White Electronic Designs
|
HYMD116645D8J-D4 HYMD116645D8J-D43 HYMD116645D8J-J |
Unbuffered DDR SDRAM DIMM 16M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Hynix Semiconductor, Inc.
|
AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块) 3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块) 3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块) 3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块) 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG INFINEON TECHNOLOGIES AG
|
K4X51323PC-7E K4X51323PC-7EC3 K4X51323PC-7GC3 K4X5 |
16M X32 MOBILE-DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|