| PART |
Description |
Maker |
| TGA2710 |
10.5 - 12GHz High Power Amplifier
|
TriQuint Semiconductor,Inc.
|
| TA060-120-35-33 |
6 ~ 12GHz 35dB Gain 33dBm Power Amplifier
|
Transcom, Inc.
|
| CHT3091AQAG20 CHT3091AQAG21 CHT3091AQAG-15 |
DC-12GHz ATTENUATOR
|
United Monolithic Semiconductors
United Monolithic Semicondu...
United Monolithic Semic...
|
| TA080-120-41-30 |
8 - 12GHz 30 dBm Amplifier
|
Transcom, Inc.
|
| RFUV1003 |
12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER
|
RFMD
|
| NBB-300-D NBB-300-E |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
|
RF Micro Devices, Inc.
|
| BAT14 BAT14-03W |
Silicon Schottky Diode
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A...
Infineon Technologies AG
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
