| PART |
Description |
Maker |
| 2SD1068 |
TENTATIVE
|
SONY[Sony Corporation]
|
| P0340WQLC-T |
Tentative Product Specification
|
AZ Displays
|
| 2SC5363TENTATIVE |
2SC5363(Tentative) - NPN Transistor
|
Matsshita / Panasonic
|
| R5F21344MDFP R5F21344MNFP R5F21345MDFP R5F21345MNF |
Specifications in this document are tentative and subject to change
|
Renesas Electronics Corporation
|
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
| TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TH58100FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NVG1S8BFT00 TC58NVG1S3BFT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| 1MBI150SH-140 |
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Tentative target specification
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| TAN-325 |
Tentative Data Audio IC Application Circuit Example of 3-V FM Radio Circuit TA2159F
|
TOSHIBA
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
