| PART |
Description |
Maker |
| 2SJ599-Z 2SJ599 |
Pch power MOSFET 60V RonMAX=75m ohm MP-3
|
NEC
|
| 2SJ600 2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3
|
NEC
|
| 2SJ605-S 2SJ605-ZJ 2SJ605-ZJ-AZ |
65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RonMAX=20m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
| IRFL014 IRFL014TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)
|
International Rectifier
|
| IRFP064 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
|
IRF[International Rectifier]
Power MOSFET
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 84A条?
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
|
International Rectifier, Corp.
|
| IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
|
IRF[International Rectifier]
|
