| PART |
Description |
Maker |
| SD200N04PV SD200N08PV SD200N16PV SD200N20PC SD200N |
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1600V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
2000V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
2400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
International Rectifier
|
| 201CMQ045 201CMQ 201CMQ035 201CMQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
|
IRF[International Rectifier]
|
| 201CNQ045 201CNQ 201CNQ035 201CNQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
IRF[International Rectifier]
|
| 209CNQ150 209CNQ 209CNQ135 |
SCHOTTKY RECTIFIER 肖特基整流器
135V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
150V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PDMC200B12C2 PDMB200B12C1 |
200A 1200V
|
http://
Nihon Inter Electronics Corporation
|
| 203CMQ...SERIES 203CMQ100 203CMQ080 |
SCHOTTKY RECTIFIER 肖特基整流器
SCHOTTKY RECTIFIER 200 Amp
80V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
100V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
|
International Rectifier, Corp.
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 30PRA20 |
FRD - 3A 200A 90ns
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| PFT2014N PFT2014N1 |
200A Avg 300 Volts
|
Nihon Inter Electronics Corporation
|
| PD200S8 |
200A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
| PDH2008 PDT2008 |
THYRISTOR MODULE 200A / 800V
|
Nihon Inter Electronics Corporation
|
| PDH20116 |
THYRISTOR MODULE 200A / 1600V
|
Nihon Inter Electronics Corporation
|
