| PART |
Description |
Maker |
| ZXTP05120HFF ZXTP05120HFFTA |
120V, SOT23F, PNP medium power Darlington transistor
|
Diodes Incorporated
|
| FMMT494Q-17 |
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| ZXTN04120HFF ZXTN04120HFFTA |
120V, SOT23F, NPN medium power Darlington transistor
|
Diodes Incorporated
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SD1953 0771 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驱动器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Spansion, Inc.
|
| 2SA921 2SA09212SA921 2SA0921S 2SA921R |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 20mA的一（c）|2
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 20mA的一（c）|92
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TE Connectivity, Ltd.
Infineon Technologies AG
Matsshita / Panasonic
|
| CSA965Y CSA965O CSC2235O |
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 120 - 240 hFE
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 240 hFE
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 160 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 160 hFE
|
Continental Device India Limited
|
| RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| ZXTN04120HP5 ZXTN04120HP5TC ZXTN04120HP5-15 |
Discrete - Bipolar Transistors - Darlington Transistors
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN POWERDI?5
|
Diodes Incorporated
|
