| PART |
Description |
Maker |
| 2SA2023 2SC5611 |
60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA195209 2SA1952 |
High-speed Switching Transistor (-60V, -5A)
|
Rohm
|
| 2SA207311 |
High voltage discharge, High speed switching,Low Noise (-60V, -3A)
|
Rohm
|
| 2SC586511 |
High voltage discharge, High speed switching, Low Noise (60V, 1A)
|
Rohm
|
| 2SC5865TLR |
High voltage discharge, High speed switching, Low Noise (60V, 1A)
|
Rohm
|
| 2SA1870 A5800375 |
From old datasheet system
High-speed Switching Transistor (-60V, -12A)
|
ROHM[Rohm]
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| 2SA2073 |
High voltage discharge, High speed switching, Low Noise (−60V, −3A)
|
Rohm
|
| RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| 2SC4203 E000913 |
EPITAXIAL PLANAR TYPE (VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
VODEO OUTPUT FOE HIGH DEFINTION VDT HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
