PART |
Description |
Maker |
2SB1590K |
Power Transistor (-15V, -1A)
|
ROHM[Rohm]
|
ZXTP23015CFHTA ZXTP23015CFH |
15V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
ZXTP25015DFH ZXTP25015DFHTA |
15V, SOT23, PNP medium power transistor
|
Diodes Incorporated
|
2SK427R 2SK427Q 2SK427T 2SK427U |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 1.7MA I(DSS) | SPAK TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SPAK Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 15V的五(巴西)直| 5mA的我(直)| SPAK
|
Toshiba, Corp.
|
HI1-5040-2 HI1-5040-5 HI1-5040-7 HI1-5040_883 HI3- |
15V/-15V Wide Analog Signal Range, High Current Capability 80mA (Typical)
|
Harris Corporation
|
ZXT11N15DF ZXT11N15DFTC ZXT11N15DFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN 15V NPN SILICON LOW SATURATION TRANSISTOR NPN Low Sat Transistor
|
Diodes, Inc. Diodes Incorporated Zetex Semiconductors
|
IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
DSS3515M-15 |
15V PNP LOW VCE(sat) TRANSISTOR
|
Diodes Incorporated
|
IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A) 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
IRGPC20M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
|
IRF[International Rectifier]
|
IRGPH20S IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A)
|
IRF[International Rectifier]
|