PART |
Description |
Maker |
2SK3050 |
Low on-resistance. Gate-source voltage (VGSS) guaranteed to be 30V. Easily designed drive circuits.
|
TY Semiconductor Co., Ltd
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IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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International Rectifier, Corp. IRF[International Rectifier]
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IRF7416 IRFB7416 IRF7416TR |
Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm) Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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International Rectifier
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IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
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IRF[International Rectifier] International Rectifier, Corp.
|
IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
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IRFR3709ZPBF IRFU3709ZPBF IRFR3709ZTRR IRFR3709ZTR |
30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC ) High Frequency Synchronous Buck Converters for Computer Processor Power
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International Rectifier
|
TPH11006NL |
Power MOSFET (N-ch single 30V<VDSS??0V) Power MOSFET (N-ch single 30V<VDSS≤60V)
|
Toshiba, Corp.
|
IRF7603 |
30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
|
International Rectifier
|
IRLU7833PBF IRLR7833PBF |
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 4.5mΩ , Qg = 33nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 4.5mヘ , Qg = 33nC )
|
International Rectifier
|
IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
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IRF[International Rectifier]
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