| PART |
Description |
Maker |
| MIG50J906H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| MGD623N |
IGBT(integrated FRD)
|
Sanken
|
| PP150B170 PP50B120 PP150T170 PP200R120 PP100T170 P |
Integrated IGBT Power Structures
|
ETC
|
| M57962K |
Hybrid Integrated Circuit For Driving IGBT Modules
|
POWEREX[Powerex Power Semiconductors]
|
| BCR12CS-12 BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| CR12AM-12 CR12AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| BCR2PM-8 BCR2PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| CY20AAJ-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| BCR8CM-12 BCR8CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
