PART |
Description |
Maker |
K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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A42L8316 A42L8316S A42L8316S-30 A42L8316V-30U A42L |
40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group SIEMENS AG
|
K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存) CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
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Fujitsu Limited Fujitsu, Ltd.
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HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器 4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http:// Infineon Technologies AG SIEMENS AG
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
IC42S32200/L-6B IC42S32200/L-6BG IC42S32200/L-6BI |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM DYNAMIC RAM, SDRAM
|
Integrated Circuit Systems ICSI
|
MB81116422A-84 MB81116422A-125 |
CMOS 2×2M ×4 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×2M ×4 位超级页面存取模式动态RAM)
|
Fujitsu Limited
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