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A43L8316AV-7 - 128K X 16 Bit X 2 Banks Synchronous DRAM

A43L8316AV-7_1204592.PDF Datasheet


 Full text search : 128K X 16 Bit X 2 Banks Synchronous DRAM


 Related Part Number
PART Description Maker
ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6    Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
http://
Maxwell Technologies, Inc
CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. 128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
ON Semiconductor
Unisonic Technologies Co., Ltd.
TDK, Corp.
Atmel, Corp.
Advanced Analog Technology, Inc.
Silicon Storage Technology, Inc.
Air Cost Control
CY27C128-120WMB CY27C128-150JC CY27C128-150WC CY27    128K (16K x 8-Bit) CMOS EPROM
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PDIP28
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PQCC32
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 45 ns, PDIP28
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 150 ns, PDIP28
128K (16K x 8-Bit) CMOS EPROM 16K X 8 UVPROM, 200 ns, CDIP28
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32
128K X 8 EEPROM 12V, 150 ns, PDSO32
128K X 8 EEPROM 12V, 150 ns, PQCC32
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
Macronix International Co., Ltd.
AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32
CABLE TIE BARB TY 120LB 18.1,1
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
ADVANCED MICRO DEVICES INC
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
Micron Technology
IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
KM68FS1000 KM68FR1000 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM)的
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
 
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