PART |
Description |
Maker |
IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双,端口静态RAM.5V的接 HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
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Integrated Device Technology, Inc.
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MCM63P733A MCM63P733ATQ133 MCM63P733ATQ117 |
128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 32 CACHE SRAM, 4 ns, PQFP100 128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 32 CACHE SRAM, 4.2 ns, PQFP100
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Motorola, Inc. Motorola Mobility Holdings, Inc.
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AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100 LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail 3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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AL5DS9069V AL5DS9159V AL5DS9199V AL5DS9169V AL5DS9 |
3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit 3.3V的同步双端口SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit
|
AverLogic Technologies, Inc. AverLogic Technologies, Corp.
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GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM 256K x 18 128K x 32 128K x 36 4Mb Sync Burst x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT) From old datasheet system 1M-BIT MASK ROM(8 BIT OUTPUT) MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出) 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
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MCNIX[Macronix International] Macronix 旺宏 Macronix International Co., Ltd. Altera, Corp.
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A43L8316AV-7 A43L8316A A43L8316AV A43L8316AV-5 A43 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
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A43L8316AV-5.5 AMICTECHNOLOGYCORPORATION-A43L8316A |
128K X 16 Bit X 2 Banks Synchronous DRAM 128K的16位2银行同步DRAM
|
AMIC Technology Corporation AMIC Technology, Corp.
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K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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IS61SP12836 |
128K x 36 Synchronous Pipelined SRAM(128K x 36 同步流水线静态RAM) 128K的同步流水线× 36的SRAM28K的36同步流水线静态内存)
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Integrated Silicon Solution, Inc.
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