| PART |
Description |
Maker |
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G2731S-120 BLS6G2731-120 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
| AM2729-125 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| AM2931-110 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
SGS Thomson Microelectronics
STMicroelectronics
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| BLL1214-250 BLL1214-250_2 |
L-band radar LDMOS transistor
From old datasheet system
|
Philips
|
| MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
