PART |
Description |
Maker |
APTDC30H601G |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE SiC Diode Full Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
|
APTDF30H1201G |
Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APTDC10H1201G |
SiC Diode Full Bridge Power Module
|
Microsemi Corporation
|
APTDC20H1201G |
SiC Diode Full Bridge Power Module
|
Microsemi Corporation
|
APTDC30H1201G |
SiC Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT75DL60HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT35DL120HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT30DF100HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT40DS10HJ |
ISOTOP Schottky Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT40DR160HJ |
ISOTOP Rectifier diode full bridge Power Module
|
Microsemi Corporation
|
APT60DS20HJ |
ISOTOP Schottky Diode Full Bridge Power Module
|
Microsemi Corporation
|
CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五(巴西)直| 17.5AI(四 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|