PART |
Description |
Maker |
DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd.
|
APTGT30H170T3G |
Full - Bridge Trench Field Stop IGBT Power Module 45 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
IXGH16N170A |
High Voltage IGBT 16 A, 1700 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
FGL60N170DTU |
60 A, 1700 V, N-CHANNEL IGBT, TO-264AA
|
FAIRCHILD SEMICONDUCTOR CORP
|
CM1200E4C-34N |
1200 A, 1700 V, N-CHANNEL IGBT
|
POWEREX INC
|
CM450DX-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
CM450DXL-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
CM200EXS-34SA |
Chopper IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
VWM350-0075P |
MOSFET Modules Three phase full bridge with Trench MOSFETs 340 A, 75 V, 0.0033 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation] IXYS, Corp.
|
FID35-06C IXYSCORP-FID35-06C |
Fast IGBT Chopper in ISOPLUS i4-PACTM 38 A, 600 V, N-CHANNEL IGBT IGBT Discretes
|
IXYS, Corp. IXYS[IXYS Corporation]
|
SSM3J01T |
1700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
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