| PART |
Description |
Maker |
| AR904S29 AR904 |
2900 V, 1230 A, 10.1 kA rectifier diode
ER 2C 2#4 SKT RECP
|
POSEICO[Power Semiconductors]
POSEICO SPA
|
| 3296-2900 |
KR Electronics part number 3296-2900 is a 2900 MHz highpass filter
|
KR Electronics, Inc.
|
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| B1100LBT-01 |
SPECIAL CUSTOMER PARTS SPECIFICATION SHEET SCS-1230
|
Diodes
|
| AR1104S29 AR1104 |
2900 V, 1680 A, 17.9 kA rectifier diode
|
POSEICO[Power Semiconductors]
POSEICO SPA
|
| CGH27060F |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH27030F |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH27015F |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| AD9122 |
Dual, 16-Bit, 1230 MSPS, TxDAC ? Digital-to-Analog Converter Data Sheet (Rev B, 05/2011)
|
Analog Devices
|
| HMC719LP4 HMC719LP4E |
GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG |
Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| NTHD5902T1 NTHD5902T1-D |
Power MOSFET Dual N-Channel ChipFET 2.9 Amps, 30 Volts
Power MOSFET Dual N-Channel ChipFET TM(双N沟道ChipFET TM功率MOSFET) 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
|
