| PART |
Description |
Maker |
| ST303S ST303S04PFK1 ST303S04PFN1 ST303S12PFN1 ST30 |
INVERTER GRADE THYRISTORS Stud Version 晶闸管逆变器级螺栓版本
From old datasheet system
400V 471A Inverter Thyristor in a TO-209AE (TO-118) package
1000V 471A Inverter Thyristor in a TO-209AE (TO-118) package
1200V 471A Inverter Thyristor in a TO-209AE (TO-118) package
800V 471A Inverter Thyristor in a TO-209AE (TO-118) package
|
International Rectifier, Corp.
|
| ST083S04PFM0 ST083S08PFM0 ST083S04PFN0 ST083S08PFN |
INVERTER GRADE THYRISTORS 晶闸管逆变器级
1200V 135A Inverter Thyristor in a TO-209AC (TO-94) package
1000V 135A Inverter Thyristor in a TO-209AC (TO-94) package
800V 135A Inverter Thyristor in a TO-209AC (TO-94) package
400V 135A Inverter Thyristor in a TO-209AC (TO-94) package
|
International Rectifier, Corp.
|
| RJH60C9DPD-00-J2 RJH60C9DPD |
10 A, 600 V, N-CHANNEL IGBT SC-63, DPAK-3
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D1DPP-M0 RJH60D1DPP-M0-T2 |
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D1DPE11 |
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| STK611-721-E |
Fan 3-phase Inverter Motor Drive Inverter Hybrid IC
|
Sanyo Semicon Device
|
| RJH60D0DPK RJH60D0DPK-00-T0 |
Silicon N Channel IGBT Application: Inverter
40 A, 600 V, N-CHANNEL IGBT
|
Renesas Electronics Corporation
|
| STK621-061-E |
3-phase Inverter Motor Drive Inverter Hybrid IC
|
Sanyo Semicon Device
|
| HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| GT40Q32306 GT40Q323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
