| PART |
Description |
Maker |
| BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR3 |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Semicon...
|
| BCR3AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Semiconductor
|
| BCR3PM |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20B BCR20E BCR20A BCR20C |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| BCR2PM |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PM15CNJ060 E80271 E80276 |
MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE 三菱\u003cINTELLIGENT POWER MODULES\u003e平性基地型绝缘包装
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
MITSUBISHI FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules: 600V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
