| PART |
Description |
Maker |
| IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
(IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62WV5128DALL-55BI IS62WV5128DALL-55BLI IS62WV512 |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS65WV25616DBLL-55CTLA3 IS62WV25616DALL-55TI IS62W |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS65WV12816BLL IS65WV12816ALL |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL |
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62U6416LL-20B IS62U6416LL-20K IS62U6416LL-20BI I |
64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| BS616UV1610FI BS616UV1610 BS616UV1610BC BS616UV161 |
Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
|
BSI[Brilliance Semiconductor]
|
| MAX6335US20D3-T MAX6336US20D3-T MAX6337US20D3-T MA |
4-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits with Manual Reset
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
4-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits with Manual Reset
4-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits with Manual Reset
4-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits with Manual Reset 4引脚，超低电压，低功耗与手动复位レP复位电路
2.5-W Mono Class-D Audio Amplifier with Variable Gain (TPA2010) 9-DSBGA -40 to 85 4引脚，超低电压，低功耗与手动复位レP复位电路
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| 6206-35/BXAJC 6206-45/BXAJC 6206-45/BYAJC 6206-100 |
x8 SRAM
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
High-Voltage, Low-Current Voltage Monitors in SOT Packages
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits x8的SRAM
|
ITT, Corp.
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
