| PART |
Description |
Maker |
| BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| BUZ72 BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=0.2 Ohm, 10A, NL
SIPMOS Power Transistor
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| BSP295 |
Low Voltage MOSFETs - N-Channel SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO615N BSO615 |
SIPMOS Small-Signal-Transistor SIPMOS小信号晶体管
Low Voltage MOSFETs - Dual N-Channel SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO615NV |
Low Voltage MOSFETs - Dual N-Channel SIPMOS Small-Signal Transistor
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSS159N BSS169N |
Low Voltage MOSFETs - Depletion MOSFET, 60V, SOT-23,RDSon = 8Ohm, 0.13A, NL
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ344 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.035 Ohm, 50A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ345 BUZ345C67078-S3121-A2 |
Single-chip ZigBee® 802.15.4 solution
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.045 Ohm, 41A, NL
|
INFINEON[Infineon Technologies AG]
|
| BUZ104L C67078-S1358-A2 BUZ104LE3046 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
