PART |
Description |
Maker |
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G6003028-FL T2G6003028-FL-15 T2G6003028-FL-EVB2 |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
HMC409LP4 |
3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
HITTITE MICROWAVE CORP
|
SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
QPD1004 QPD1004EVB1 QPD1004S2 QPD1004SQ QPD1004SR |
25W, 50V, 30 ?1200 MHz, GaN RF Input-Matched Transistor
|
TriQuint Semiconductor
|
DU2805S |
RF MOSFET Power Transistor, 5W, 28V 2 - 175 MHz RF MOSFET Power Transistor/ 5W/ 28V 2 - 175 MHz
|
Tyco Electronics
|
1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp. Microsemi Corporation
|
NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution... M/A-COM Technology Solu...
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