| PART |
Description |
Maker |
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| CMPA0060025F CMPA0060025F-AMP CMPA0060025F-TB |
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
|
Cree, Inc
|
| MAAM-007866-0P1R00 MAAM-007866-0P1RA1 MAAM-007866- |
Broadband Driver Amplifier 50 to 3300 MHz
|
M/A-COM Technology Solutions, Inc.
|
| HMC822LP6CE |
FRACTIONAL-N SYNTHESIZER w/ INTEGRATED VCO 665 - 825, 1330 - 1650, 2660 - 3300 MHz
|
Hittite Microwave Corporation
|
| SC4524C |
28V 2A Step-Down Switching Regulator Wide input range: 3V to 28V
|
Semtech Corporation
|
| QPD1004 QPD1004EVB1 QPD1004S2 QPD1004SQ QPD1004SR |
25W, 50V, 30 ?1200 MHz, GaN RF Input-Matched Transistor
|
TriQuint Semiconductor
|
| DU2805S |
2-175 MHz, 5W, 28V, RF MOSFET power transistor
|
MA-Com
|
