| PART |
Description |
Maker |
| CJP06N60 |
Power filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP02N60 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| MTP10N15 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MRF6522-70 MRF6522-70R306 MRF6522-70R3 |
RF Power Field Effect Transistor
|
http://
Freescale Semiconductor, Inc
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MRFE6S9045NR1 |
RF Power Field Effect Transistor
|
椋???″????浣?涓??)??????
|
| MTP2N90 MTM2N85 MTM2N90 MTP2N85 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| IRF830 |
Power Field Effect Transistor
|
ON Semiconductor
|
