| PART |
Description |
Maker |
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| AFM08P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
| NE650103M NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
| NEZ6472-8DD NEZ5964-4DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Microsemi, Corp.
|
| NEZ1011-8E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-61, 2 PIN
|
NEC, Corp.
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| NES1823P-100 |
100W L-BAND PUSH-PULL POWER GaAs MESFET
|
NEC[NEC]
|
| NEZ6472-15D |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
Electronics Industry Public Company Limited
|
| NEZ7785-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
NEC, Corp.
Electronics Industry Public Company Limited
|
| CGY4111 |
HiRel L- and S-Band GaAs General Purpose Amplifier
|
Infineon Technologies AG
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
|
