| PART |
Description |
Maker |
| CRF24010D |
10 W SiC RF Power MESFET Die
|
CREE[Cree, Inc]
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| NEZ1011-2E NEZ1414-2E |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET
2W X / Ku-BAND POWER GaAs MESFET
2W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| APT2X21DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| CF010_06 CF003-01 CF005-01 CF010 CF010-01 |
Broadband Power GaAs MESFET Chips
|
MIMIX[Mimix Broadband]
|
| CF010-01 CF003-01 CF005-01 CF010 |
Broadband Power GaAs MESFET Chip
|
MIMIX[Mimix Broadband]
|
| NE650049600 |
L&S BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
ETC[ETC]
|
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
