| PART |
Description |
Maker |
| NE3519M04 NE3519M04-T2 NE3519M04-T2B |
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NE34018-TI-64-A NE34018-TI-63-A NE34018-A |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
California Eastern Laboratories
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| SPF-3043 |
Low Noise pHEMT GaAs FET
|
SIRENZA[SIRENZA MICRODEVICES]
|
| CFB0301 PB-CFB0301 CFB0301-000T |
High Dynamic Range Low-Noise GaAs FET
|
Mimix Broadband
|
| SPF-2086TK |
Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation
|
List of Unclassifed Manufacturers
ETC
SIRENZA[SIRENZA MICRODEVICES]
|
| MGF1902B 1902B |
From old datasheet system
TAPE CARRIER LOW NOISE GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
