| PART |
Description |
Maker |
| AA035N1-00 AA035N2-00 |
286 GHz GaAs MMIC Low Noise Amplifier
28-36 GHz GaAs MMIC Low Noise Amplifier
GT 12C 6#12 6#12 PIN PLUG
|
http://
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| MGF1302 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| SPF-3043 |
Low Noise pHEMT GaAs FET
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SPF-3143 |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|
| M5238AFP M5238AL M5238AP M5238P M5238FP |
DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS 双路低噪声J - FET输入运算放大
DUAL LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS
CRYSTAL 30.000 MHZ 10PF SMD 双低噪声JFET输入运算放大
Dual Low Noise J-Fet Input Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
| PB-CFB0301 |
High Dynamic Range Low-Noise GaAs FET 高动态范围低噪声砷化镓场效应
|
Mimix Broadband, Inc.
|
| NE3513M04-T2B-A |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
