PART |
Description |
Maker |
TB6200X TB62009P TB62003 TB62003F TB62003FW TB6200 |
8 CH DMOS TRANSISTOR ARRAY WITH GATE 8路DMOS晶体管阵列门 8CH DMOS TRANSISTOR APPAY WITH GATE From old datasheet system
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D2229UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1204 D1204UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应30W-12.5V-500MHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1212UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-12.5V-500MHz,推挽)
|
SemeLAB
|
LT315 |
Photo DMOS-FET Relay
|
List of Unclassifed Manufacturers ETC[ETC]
|
D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
DN247007 DN2470K4-G |
N-Channel Depletion-Mode Vertical DMOS FET
|
Supertex, Inc
|