| PART |
Description |
Maker |
| VN0106 VN0106N3 VN0104N3 VN0104 |
N-Channel Enhancement-Mode Vertical DMOS FET N沟道增强型场效应管垂直的DMOS
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,500MA I(D),TO-92
|
Supertex, Inc.
SUTEX[Supertex, Inc]
Supertex Inc
|
| 2SK2360 2SK2359 TC-2501 2SK2359-Z |
N-channel enhancement type DMOS
From old datasheet system
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| D2232UK D1212UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-7.2V-850MHz,单端)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| D2224UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-7.2V-850MHz,单端)
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D1210UK D1210 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-175MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1217UK D1217 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| SD5000-LCC6 |
N-Channel Lateral DMOS FET(N沟道侧面DMOS场效应管)
|
Semelab(Magnatec)
|
| ZVP3306A ZVP3306A-15 |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
