| PART |
Description |
Maker |
| 2SC5053 |
Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA.
|
TY Semiconductor Co., L...
|
| 2SB118410 2SB1184TLR 2SB1243TV2Q |
Power Transistor (-60V, -3A)
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
|
Rohm
|
| EN7645 |
Bipolar Transistor, (-12V)15V, (-1A)1.4A, Low VCE(sat) Complementary Dual MCPH6
|
ON Semiconductor
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
| 2SD1766 |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).
|
TY Semiconductor Co., Ltd
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| NSS30070MR6T1G |
30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| TSB1184CPS TSB1184 TSB1184CP TSB1184CPQ TSB1184CPR |
Low Vce(sat) PNP Transistor 低Vce（sat）PNP晶体
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
