| PART |
Description |
Maker |
| ESN35A030MK EGN35A030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| ESN26A090IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A045I EGN21A045IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| CLE539W |
High Power GaN White LED Flat Window Can, Hermetically Sealed
|
ETC
|
| CLE546W |
High Power GaN Blue LED Flat Window Hermetic Coaxial Package
|
Clairex Technologies, Inc
ETC[ETC]
|
| CLE545W |
High Power GaN Green LED Flat Window Hermetic Coaxial Package
|
Clairex Technologies, Inc
ETC[ETC]
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| BF723 BF721 Q62702-F1309 Q62702-F1239 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) 进步党硅高压晶体管在电视机的视频输出级（适合开关电源和高击穿电压）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
