| PART |
Description |
Maker |
| F5G1 |
AIGAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| QEC121 QEC122 |
AIGAAS INFRARED EMITTING DIODE
|
QT Optoelectronics
|
| MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED) 红外发光二极管（登记合格决定
|
Unity Opto Technology Co., Ltd.
Vishay Intertechnology, Inc.
UOT[Unity Opto Technology]
|
| MIE-334A4 334A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| OP296 OP295 OP297 |
GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极窄入射模式，峰值前向电.0A)
GaAlAs Plastic Infrared Emitting Diode(??????濉??灏??绾㈠????浜??绠?绐??灏?ā寮??宄板?????垫悼.0A)
|
Optek Technology
|
