| PART |
Description |
Maker |
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| FD1500CV-90DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 33981 PC33981PNA/R2 MC33981 |
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m?up to 60 kHz)
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 mз up to 60 kHz) 高频率，大电流，自我保护的高边开关（4.0mз0千赫
High-Frequency/ High-Current/ Self-Protected High-Side Switch (4.0 m up to 60 kHz)
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Motorola Inc
|
| FZ800R12KS4B2 |
High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
|
eupec GmbH
|
| 2014VS-111ME 2014VS-151ME 2014VS-201ME |
High Frequency, High Current Power Inductors
|
Coilcraft lnc.
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| KSC2690 KSC2690A |
NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
