| PART |
Description |
Maker |
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQI9N25C FQB9N25C FQB9N25CTM FQI9N25CTU |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF8N60CT |
600V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| SFW9614TM |
250V P-Channel A-FET
|
Fairchild Semiconductor
|
| FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP8N90C FQPF8N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
